Gan Device Development Director, Bienne

I am searching for a GaN Device Development Director for one of my esteemed clients based near Biel/Bienne Switzerland.

Due to their continued success, they are looking to add a GaN Device Development Director to their team.

This person will be responsible for building technology platforms for power device design and new technology developments as well as building a world-class team who are also focused on GaN Devices.

Other responsibilities of the role include:

• Implement DOE experimental design of power semiconductor devices, tape-out solution design and acceptance, including co-development with foundries, device testing and verification and other necessary new product verification links
• Analyse and organize experimental data, and use innovative thinking to transform technology in R&D work into new products and intellectual property
• Be responsible for technical support for external customers
• Performing TCAD process and device simulations, and layout design

To be considered for this GaN Device Development Director , the successful candidates will have a degree in microelectronics or electronics engineering with a proven background in Power IGBTs and other devices.

If this GaN Development Design Director is of interest, then please apply with an up-to-date CV and contact information.